Source: Journal of Applied Physics. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
ABNT
ZANATTA, Antonio Ricardo e RIBEIRO, C. T. M. e FREIRE JUNIOR, F L. Optoelectronic and structural properties of Er-doped sputter-deposited gallium-arsenic-nitrogen films. Journal of Applied Physics, v. 90, n. 5, p. 2321-2328, 2001Tradução . . Disponível em: https://doi.org/10.1063/1.1388568. Acesso em: 21 maio 2024.APA
Zanatta, A. R., Ribeiro, C. T. M., & Freire Junior, F. L. (2001). Optoelectronic and structural properties of Er-doped sputter-deposited gallium-arsenic-nitrogen films. Journal of Applied Physics, 90( 5), 2321-2328. doi:10.1063/1.1388568NLM
Zanatta AR, Ribeiro CTM, Freire Junior FL. Optoelectronic and structural properties of Er-doped sputter-deposited gallium-arsenic-nitrogen films [Internet]. Journal of Applied Physics. 2001 ;90( 5): 2321-2328.[citado 2024 maio 21 ] Available from: https://doi.org/10.1063/1.1388568Vancouver
Zanatta AR, Ribeiro CTM, Freire Junior FL. Optoelectronic and structural properties of Er-doped sputter-deposited gallium-arsenic-nitrogen films [Internet]. Journal of Applied Physics. 2001 ;90( 5): 2321-2328.[citado 2024 maio 21 ] Available from: https://doi.org/10.1063/1.1388568